Modelling of I2l unit cell
- Authors: Kirschner, Nikolaus
- Date: 2015-09-08
- Subjects: Integrated circuits , Transistor circuits , Electric circuits
- Type: Thesis
- Identifier: uj:14066 , http://hdl.handle.net/10210/14482
- Description: Ph.D. , Please refer to full text to view abstract
- Full Text:
- Authors: Kirschner, Nikolaus
- Date: 2015-09-08
- Subjects: Integrated circuits , Transistor circuits , Electric circuits
- Type: Thesis
- Identifier: uj:14066 , http://hdl.handle.net/10210/14482
- Description: Ph.D. , Please refer to full text to view abstract
- Full Text:
Schottky-Hek veldeffektransistortegnologie met ioonplant en verstuifets
- Authors: Lacquet, Beatrys Margaretha
- Date: 2014-09-29
- Subjects: Integrated circuits , Semiconductors
- Type: Thesis
- Identifier: http://ujcontent.uj.ac.za8080/10210/380003 , uj:12416 , http://hdl.handle.net/10210/12197
- Description: M.Ing. (Electrical & Electronic Engineering Science) , Please refer to full text to view abstract
- Full Text:
- Authors: Lacquet, Beatrys Margaretha
- Date: 2014-09-29
- Subjects: Integrated circuits , Semiconductors
- Type: Thesis
- Identifier: http://ujcontent.uj.ac.za8080/10210/380003 , uj:12416 , http://hdl.handle.net/10210/12197
- Description: M.Ing. (Electrical & Electronic Engineering Science) , Please refer to full text to view abstract
- Full Text:
Optimisasie en produksie van laespanning komplimentêre metaaloksied-halfgeleier-syferskakelbane vir gebruik in die Suid-Afrikaanse syfertelefoonsisteem
- Authors: Olivier, Hercules Stephanus
- Date: 2014-04-10
- Subjects: Telecommunication - South Africa , Integrated circuits , Telephone systems - Design and construction - South Africa
- Type: Thesis
- Identifier: uj:10565 , http://hdl.handle.net/10210/10091
- Description: M.Sc. , The work is based on a project done by SAMES (South African Micro Electronic Systems) for the local production of an integrated circuit that previously had to be imported. The circuit finds application in the telecommunications field where it controls loop disconnect dialling in the telephones. The mechanical disc dial is thus replaced by an electronic network that makes use of push-button entry and full digital out-dialling. The push-button telephone is compatible with the rotary disc dial telephone with advantages in reliability, speed and ease of use. An access pause and re dial facility add towards a more efficient telephone. The circuit was bought from an American company for manufacturing purposes. A process fit and circuit modifications were done for product ion on the CMOS process line at SAMES. The work includes a circuit- and process study with modifications, computer aided design, prototype production and analysis. The original circuit is called the General Instruments AY-5-9151D and the re-designed version the SAMES SA 9151-A2.
- Full Text:
- Authors: Olivier, Hercules Stephanus
- Date: 2014-04-10
- Subjects: Telecommunication - South Africa , Integrated circuits , Telephone systems - Design and construction - South Africa
- Type: Thesis
- Identifier: uj:10565 , http://hdl.handle.net/10210/10091
- Description: M.Sc. , The work is based on a project done by SAMES (South African Micro Electronic Systems) for the local production of an integrated circuit that previously had to be imported. The circuit finds application in the telecommunications field where it controls loop disconnect dialling in the telephones. The mechanical disc dial is thus replaced by an electronic network that makes use of push-button entry and full digital out-dialling. The push-button telephone is compatible with the rotary disc dial telephone with advantages in reliability, speed and ease of use. An access pause and re dial facility add towards a more efficient telephone. The circuit was bought from an American company for manufacturing purposes. A process fit and circuit modifications were done for product ion on the CMOS process line at SAMES. The work includes a circuit- and process study with modifications, computer aided design, prototype production and analysis. The original circuit is called the General Instruments AY-5-9151D and the re-designed version the SAMES SA 9151-A2.
- Full Text:
Thermal and flicker noise improvement in short-channel CMOS detectors
- Venter, Johan, Sinha, Saurabh
- Authors: Venter, Johan , Sinha, Saurabh
- Date: 2014
- Subjects: CMOS sensors , Detector development , Infrared detectors , Integrated circuits , Near infrared , Sensors , Simulations
- Type: Article
- Identifier: http://ujcontent.uj.ac.za8080/10210/374668 , uj:4735 , ISSN 0277-786X , http://hdl.handle.net/10210/11662
- Description: Integrated circuit (IC) technology has emerged as a suitable platform for infrared (IR) detector development. This technology is however susceptible to on-chip intrinsic noise. By using double-gate MOSFETs for detectors in the near-IR band, noise performance in the readout circuitry is improved, thereby enhancing the overall performance of these detectors. A 1 dB reduction in low-frequency noise is achieved, which is verified through simulations. It is shown that by using short-channel devices that noise improvement is furthermore obtained due to reduction in threshold voltage variation. The double-gate concept is applied in simulation to the three-transistor pixel topology and can also be implemented in other detector topologies such as the four-transistor pixel topology, since readout noise is not limited to specific IR detector topologies. The overall performance of near-IR detectors and the fill factor are significantly improved. © (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
- Full Text:
- Authors: Venter, Johan , Sinha, Saurabh
- Date: 2014
- Subjects: CMOS sensors , Detector development , Infrared detectors , Integrated circuits , Near infrared , Sensors , Simulations
- Type: Article
- Identifier: http://ujcontent.uj.ac.za8080/10210/374668 , uj:4735 , ISSN 0277-786X , http://hdl.handle.net/10210/11662
- Description: Integrated circuit (IC) technology has emerged as a suitable platform for infrared (IR) detector development. This technology is however susceptible to on-chip intrinsic noise. By using double-gate MOSFETs for detectors in the near-IR band, noise performance in the readout circuitry is improved, thereby enhancing the overall performance of these detectors. A 1 dB reduction in low-frequency noise is achieved, which is verified through simulations. It is shown that by using short-channel devices that noise improvement is furthermore obtained due to reduction in threshold voltage variation. The double-gate concept is applied in simulation to the three-transistor pixel topology and can also be implemented in other detector topologies such as the four-transistor pixel topology, since readout noise is not limited to specific IR detector topologies. The overall performance of near-IR detectors and the fill factor are significantly improved. © (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
- Full Text:
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