A cost-effective low-voltage moulded-case circuit breaker test jig
- Venter, Johan, Van Niekerk, Daniel Rodrigues
- Authors: Venter, Johan , Van Niekerk, Daniel Rodrigues
- Date: 2019
- Language: English
- Type: Conference proceedings
- Identifier: http://hdl.handle.net/10210/409666 , uj:34351 , Citation: Venter, J., Van Niekerk, D.R. 2019: A cost-effective low-voltage moulded-case circuit breaker test jig.
- Description: Abstract: A practical method to test post-manufactured mechanical thermal and thermal-magnetic low voltage Moulded Case Circuit Breakers (MCCBs) is presented in this paper. Many standards pertaining to the ratings of low voltage MCCBs exist, but little literature exists on how to verify its specified rating post-manufacturing. In this work, a variable voltage over fixed cable and MCCB switch contact resistance test method is used to verify ratings. This method uses two variable transformers driven by two separate stepper motors controlled by a microcontroller with a final step-down toroid transformer. To measure the circuit breaker, trip current level an accurate Hall-Effect current sensor was used and the trip time is determined by a microcontroller-based peripheral timer. Testing was conducted on four different types of circuit breakers, namely: C6, D10, C16, and C20 in order to verify the test jig functionality with good results.
- Full Text:
- Authors: Venter, Johan , Van Niekerk, Daniel Rodrigues
- Date: 2019
- Language: English
- Type: Conference proceedings
- Identifier: http://hdl.handle.net/10210/409666 , uj:34351 , Citation: Venter, J., Van Niekerk, D.R. 2019: A cost-effective low-voltage moulded-case circuit breaker test jig.
- Description: Abstract: A practical method to test post-manufactured mechanical thermal and thermal-magnetic low voltage Moulded Case Circuit Breakers (MCCBs) is presented in this paper. Many standards pertaining to the ratings of low voltage MCCBs exist, but little literature exists on how to verify its specified rating post-manufacturing. In this work, a variable voltage over fixed cable and MCCB switch contact resistance test method is used to verify ratings. This method uses two variable transformers driven by two separate stepper motors controlled by a microcontroller with a final step-down toroid transformer. To measure the circuit breaker, trip current level an accurate Hall-Effect current sensor was used and the trip time is determined by a microcontroller-based peripheral timer. Testing was conducted on four different types of circuit breakers, namely: C6, D10, C16, and C20 in order to verify the test jig functionality with good results.
- Full Text:
Characterization of diode-connected heterojunction bipolar transistors for near-infrared detecting applications
- Venter, Johan, Sinha, Saurabh, Lambrechts, Wynand
- Authors: Venter, Johan , Sinha, Saurabh , Lambrechts, Wynand
- Date: 2018
- Subjects: Heterojunction bipolar transistor , Infrared radiation photodetectors , Circuit noise
- Language: English
- Type: Article
- Identifier: http://hdl.handle.net/10210/289227 , uj:31377 , Citation: Johan Venter, Saurabh Sinha, Wynand Lambrechts, “Characterization of diode-connected heterojunction bipolar transistors for near-infrared detecting applications,” Opt. Eng. 57(11), 117104 (2018), doi: 10.1117/1.OE.57.11.117104.
- Description: Abstract: Please refer to full text to view abstract.
- Full Text:
- Authors: Venter, Johan , Sinha, Saurabh , Lambrechts, Wynand
- Date: 2018
- Subjects: Heterojunction bipolar transistor , Infrared radiation photodetectors , Circuit noise
- Language: English
- Type: Article
- Identifier: http://hdl.handle.net/10210/289227 , uj:31377 , Citation: Johan Venter, Saurabh Sinha, Wynand Lambrechts, “Characterization of diode-connected heterojunction bipolar transistors for near-infrared detecting applications,” Opt. Eng. 57(11), 117104 (2018), doi: 10.1117/1.OE.57.11.117104.
- Description: Abstract: Please refer to full text to view abstract.
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Noise reduction by pixel circuit optimization in 4-T pixel structure detectors using integrated circuit technologies
- Venter, Johan, Sinha, Saurabh
- Authors: Venter, Johan , Sinha, Saurabh
- Date: 2015
- Subjects: CMOS technology , Active pixel sensors , Threshold voltage
- Language: English
- Type: Conference proceedings
- Identifier: http://hdl.handle.net/10210/15236 , uj:15636 , ISBN:9781479974733 , Citation: Venter, J. & Sinha, S. 2015. Noise reduction by pixel circuit optimization in 4-T pixel structure detectors using integrated circuit technologies. IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS 2015), 2 - 4 November 2015, Tel Aviv, Israel
- Description: Abstract: The most commonly used pixel structure in integrated circuit technologies is the three-transistor pixel structure (3-T). This structure consists of a pixel, a reset transistor, a source follower and a pixel select transistor. An extension to this is the 4-T pixel structure where an extra transistor is included to enable current steering in the readout phase and reset phase. This greatly reduces current consumption compared to the conventional 3-T pixel structure. Simulation results depicting this optimization is provided to support the technical contribution of this paper.
- Full Text:
- Authors: Venter, Johan , Sinha, Saurabh
- Date: 2015
- Subjects: CMOS technology , Active pixel sensors , Threshold voltage
- Language: English
- Type: Conference proceedings
- Identifier: http://hdl.handle.net/10210/15236 , uj:15636 , ISBN:9781479974733 , Citation: Venter, J. & Sinha, S. 2015. Noise reduction by pixel circuit optimization in 4-T pixel structure detectors using integrated circuit technologies. IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS 2015), 2 - 4 November 2015, Tel Aviv, Israel
- Description: Abstract: The most commonly used pixel structure in integrated circuit technologies is the three-transistor pixel structure (3-T). This structure consists of a pixel, a reset transistor, a source follower and a pixel select transistor. An extension to this is the 4-T pixel structure where an extra transistor is included to enable current steering in the readout phase and reset phase. This greatly reduces current consumption compared to the conventional 3-T pixel structure. Simulation results depicting this optimization is provided to support the technical contribution of this paper.
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Thermal and flicker noise improvement in short-channel CMOS detectors
- Venter, Johan, Sinha, Saurabh
- Authors: Venter, Johan , Sinha, Saurabh
- Date: 2014
- Subjects: CMOS sensors , Detector development , Infrared detectors , Integrated circuits , Near infrared , Sensors , Simulations
- Type: Article
- Identifier: http://ujcontent.uj.ac.za8080/10210/374668 , uj:4735 , ISSN 0277-786X , http://hdl.handle.net/10210/11662
- Description: Integrated circuit (IC) technology has emerged as a suitable platform for infrared (IR) detector development. This technology is however susceptible to on-chip intrinsic noise. By using double-gate MOSFETs for detectors in the near-IR band, noise performance in the readout circuitry is improved, thereby enhancing the overall performance of these detectors. A 1 dB reduction in low-frequency noise is achieved, which is verified through simulations. It is shown that by using short-channel devices that noise improvement is furthermore obtained due to reduction in threshold voltage variation. The double-gate concept is applied in simulation to the three-transistor pixel topology and can also be implemented in other detector topologies such as the four-transistor pixel topology, since readout noise is not limited to specific IR detector topologies. The overall performance of near-IR detectors and the fill factor are significantly improved. © (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
- Full Text:
- Authors: Venter, Johan , Sinha, Saurabh
- Date: 2014
- Subjects: CMOS sensors , Detector development , Infrared detectors , Integrated circuits , Near infrared , Sensors , Simulations
- Type: Article
- Identifier: http://ujcontent.uj.ac.za8080/10210/374668 , uj:4735 , ISSN 0277-786X , http://hdl.handle.net/10210/11662
- Description: Integrated circuit (IC) technology has emerged as a suitable platform for infrared (IR) detector development. This technology is however susceptible to on-chip intrinsic noise. By using double-gate MOSFETs for detectors in the near-IR band, noise performance in the readout circuitry is improved, thereby enhancing the overall performance of these detectors. A 1 dB reduction in low-frequency noise is achieved, which is verified through simulations. It is shown that by using short-channel devices that noise improvement is furthermore obtained due to reduction in threshold voltage variation. The double-gate concept is applied in simulation to the three-transistor pixel topology and can also be implemented in other detector topologies such as the four-transistor pixel topology, since readout noise is not limited to specific IR detector topologies. The overall performance of near-IR detectors and the fill factor are significantly improved. © (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
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