Atomic layer deposition process modeling and experimental investigation for sustainable manufacturing of nano thin films
- Pan, Dongqing, Guan, Dongsheng, Jen, Tien-Chien, Yuan, Chris
- Authors: Pan, Dongqing , Guan, Dongsheng , Jen, Tien-Chien , Yuan, Chris
- Date: 2016
- Subjects: Atomic layer deposition; ; , Density functional theory , Sustainability
- Language: English
- Type: Article
- Identifier: http://hdl.handle.net/10210/213957 , uj:21218 , Citation: Pan, D. et al. 2016. Atomic layer deposition process modeling and experimental investigation for sustainable manufacturing of nano thin films.
- Description: Abstract: This paper studies the adverse environmental impacts of atomic layer deposition (ALD) nano-manufacturing technology on ALD of Al2O3 nano-scale thin films. Numerical simulations with detailed ALD surface reaction mechanism developed based on Density Functional Theory (DFT), and atomic-level calculations are performed to investigate the effects of four process parameters including process temperature, pulse time, purge time, and carrier gas flow rate on ALD film deposition rate, process emissions and wastes. Full-cycle ALD simulations reveal that the depositions of nano-thin-films in ALD are in essence the chemisorption of the gaseous species and the conversion of surface species. Methane emissions are positively proportional to the film deposition process. The studies show that process temperature fundamentally affects the ALD chemical process by changing the energy states of the surface species. Pulse time is directly related to the precursor dosage. Purge time influences the ALD process by changing the gas-surface interaction time, and higher carrier gas flow rate alters the ALD flow field by accelerating the convective heat and mass transfer in ALD process.
- Full Text:
- Authors: Pan, Dongqing , Guan, Dongsheng , Jen, Tien-Chien , Yuan, Chris
- Date: 2016
- Subjects: Atomic layer deposition; ; , Density functional theory , Sustainability
- Language: English
- Type: Article
- Identifier: http://hdl.handle.net/10210/213957 , uj:21218 , Citation: Pan, D. et al. 2016. Atomic layer deposition process modeling and experimental investigation for sustainable manufacturing of nano thin films.
- Description: Abstract: This paper studies the adverse environmental impacts of atomic layer deposition (ALD) nano-manufacturing technology on ALD of Al2O3 nano-scale thin films. Numerical simulations with detailed ALD surface reaction mechanism developed based on Density Functional Theory (DFT), and atomic-level calculations are performed to investigate the effects of four process parameters including process temperature, pulse time, purge time, and carrier gas flow rate on ALD film deposition rate, process emissions and wastes. Full-cycle ALD simulations reveal that the depositions of nano-thin-films in ALD are in essence the chemisorption of the gaseous species and the conversion of surface species. Methane emissions are positively proportional to the film deposition process. The studies show that process temperature fundamentally affects the ALD chemical process by changing the energy states of the surface species. Pulse time is directly related to the precursor dosage. Purge time influences the ALD process by changing the gas-surface interaction time, and higher carrier gas flow rate alters the ALD flow field by accelerating the convective heat and mass transfer in ALD process.
- Full Text:
Effects of gap size, temperature and pumping pressure on the fluid dynamics and chemical kinetics of in-line spatial atomic layer deposition of Al2O3
- Pan, Dongqing, Ma, Lulu, Jen, Tien-Chien, Yuan, Chris
- Authors: Pan, Dongqing , Ma, Lulu , Jen, Tien-Chien , Yuan, Chris
- Date: 2016
- Subjects: In-line spatial ALD , Gap size , Temperature
- Language: English
- Type: Article
- Identifier: http://hdl.handle.net/10210/212676 , uj:21006 , Citation: Pan, D., Ma, L., Jen, T & Yuan, C. 2016. Effects of gap size, temperature and pumping pressure on the fluid dynamics and chemical kinetics of in-line spatial atomic layer deposition of Al2O3.
- Description: Abstract: Low throughput is a major limitation for industrial level atomic layer deposition (ALD) applications. Spatial ALD is regarded as a promising solution to this issue. With numerical simulations, this paper studies an in-line spatial ALD reactor by investigating the effects of gap size, temperature, and pumping pressure on the flow and surface chemical deposition processes in Al2O3 ALD. The precursor intermixing is a critical issue in spatial ALD system design, and it is highly dependent on the flow and material distributions. By numerical studies, it’s found that bigger gap, e.g., 2 mm, results in less precursor intermixing, but generates slightly lower saturated deposition rate. Wafer temperature is shown as a significant factor in both flow and surface deposition processes. Higher temperature accelerates the diffusive mass transport, which largely contributes to the precursor intermixing. On the other hand, higher temperature increases film deposition rate. Well-maintained pumping pressure is beneficial to decrease the precursor intermixing level, but its effect on the chemical process is shown very weak. It is revealed that the time scale of in-line spatial ALD cycle is only in tens of milliseconds, i.e., ~15 ms. Considering that the in-line spatial ALD is a continuous process without purging step, the ALD cycle time is greatly shortened, and hence the overall throughput is shown as high as ~8 nm/s, compared to several nm/min in traditional ALD.
- Full Text:
- Authors: Pan, Dongqing , Ma, Lulu , Jen, Tien-Chien , Yuan, Chris
- Date: 2016
- Subjects: In-line spatial ALD , Gap size , Temperature
- Language: English
- Type: Article
- Identifier: http://hdl.handle.net/10210/212676 , uj:21006 , Citation: Pan, D., Ma, L., Jen, T & Yuan, C. 2016. Effects of gap size, temperature and pumping pressure on the fluid dynamics and chemical kinetics of in-line spatial atomic layer deposition of Al2O3.
- Description: Abstract: Low throughput is a major limitation for industrial level atomic layer deposition (ALD) applications. Spatial ALD is regarded as a promising solution to this issue. With numerical simulations, this paper studies an in-line spatial ALD reactor by investigating the effects of gap size, temperature, and pumping pressure on the flow and surface chemical deposition processes in Al2O3 ALD. The precursor intermixing is a critical issue in spatial ALD system design, and it is highly dependent on the flow and material distributions. By numerical studies, it’s found that bigger gap, e.g., 2 mm, results in less precursor intermixing, but generates slightly lower saturated deposition rate. Wafer temperature is shown as a significant factor in both flow and surface deposition processes. Higher temperature accelerates the diffusive mass transport, which largely contributes to the precursor intermixing. On the other hand, higher temperature increases film deposition rate. Well-maintained pumping pressure is beneficial to decrease the precursor intermixing level, but its effect on the chemical process is shown very weak. It is revealed that the time scale of in-line spatial ALD cycle is only in tens of milliseconds, i.e., ~15 ms. Considering that the in-line spatial ALD is a continuous process without purging step, the ALD cycle time is greatly shortened, and hence the overall throughput is shown as high as ~8 nm/s, compared to several nm/min in traditional ALD.
- Full Text:
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