The fluid flow effect on the inlet injection of the thin film deposition in a square type atomic layer deposition reactor
- Coetzee, Rigardt Alfred Maarten, Lu, Hongliang, Jen, Tien-Chien
- Authors: Coetzee, Rigardt Alfred Maarten , Lu, Hongliang , Jen, Tien-Chien
- Date: 2019
- Subjects: Nanotechnology , Atomic layer deposition , Computational fluid dynamics
- Language: English
- Type: Article
- Identifier: http://hdl.handle.net/10210/400082 , uj:33374 , Citation: Coetzee, R.A.M., Lu, H., & Jen, T.C. 2019. The fluid flow effect on the inlet injection of the thin film deposition in a square type atomic layer deposition reactor.
- Description: Abstract: In recent years, industry is ever striving to deposit optimal thin films on Nano devices. This strive led to interest in utilising advance Nano-manufacturing techniques that can fabricate ever-decreasing scale products along with films that provide highly uniform, conformal, and pin-hole free quality thin films. Atomic layer deposition provides a technique that fulfil these requirements. However, the understanding of the deposition process within the fabrication of these thin films are still greatly not well-known. The fluid flow patterns and distributions within the atomic layer deposition reactors are rarely investigated and lacks the fluid flow effect incorporated along with the deposition process near the substrate. Per se, these effects due to the geometrical effect of the inlet injection location from the deposited substrate of a square type Gemstar Reactor is investigated. The findings reveal the inlet flow effect, near substrate flow behaviour, and optimal selection for the deposition of aluminium oxide (Al2O3) thin film. The study simulates the fluid flow properties along with the chemical kinetics by utilizing computational fluid dynamics incorporated within ANSYS Fluent Software. The flow and surface reaction of Trimethylaluminium and Ozone as precursors, along with Argon as the purging substance, are incorporated within the atomic layer deposition sequence. The findings reveal close similarities to that of previous literature.
- Full Text:
- Authors: Coetzee, Rigardt Alfred Maarten , Lu, Hongliang , Jen, Tien-Chien
- Date: 2019
- Subjects: Nanotechnology , Atomic layer deposition , Computational fluid dynamics
- Language: English
- Type: Article
- Identifier: http://hdl.handle.net/10210/400082 , uj:33374 , Citation: Coetzee, R.A.M., Lu, H., & Jen, T.C. 2019. The fluid flow effect on the inlet injection of the thin film deposition in a square type atomic layer deposition reactor.
- Description: Abstract: In recent years, industry is ever striving to deposit optimal thin films on Nano devices. This strive led to interest in utilising advance Nano-manufacturing techniques that can fabricate ever-decreasing scale products along with films that provide highly uniform, conformal, and pin-hole free quality thin films. Atomic layer deposition provides a technique that fulfil these requirements. However, the understanding of the deposition process within the fabrication of these thin films are still greatly not well-known. The fluid flow patterns and distributions within the atomic layer deposition reactors are rarely investigated and lacks the fluid flow effect incorporated along with the deposition process near the substrate. Per se, these effects due to the geometrical effect of the inlet injection location from the deposited substrate of a square type Gemstar Reactor is investigated. The findings reveal the inlet flow effect, near substrate flow behaviour, and optimal selection for the deposition of aluminium oxide (Al2O3) thin film. The study simulates the fluid flow properties along with the chemical kinetics by utilizing computational fluid dynamics incorporated within ANSYS Fluent Software. The flow and surface reaction of Trimethylaluminium and Ozone as precursors, along with Argon as the purging substance, are incorporated within the atomic layer deposition sequence. The findings reveal close similarities to that of previous literature.
- Full Text:
The investigation of the exposure time effects with pressure in the atomic layer deposition process over micro-trench surface
- Olufunsho, Oladipo Olotu, Coetzee, Rigardt Alfred Maarten, Jen, Tien-Chien, Olubambi, Peter Apata
- Authors: Olufunsho, Oladipo Olotu , Coetzee, Rigardt Alfred Maarten , Jen, Tien-Chien , Olubambi, Peter Apata
- Date: 2019
- Subjects: Atomic layer deposition , Computational fluid dynamic , Exposure time
- Language: English
- Type: Conference proceeding
- Identifier: http://hdl.handle.net/10210/398293 , uj:33149 , Citation: Olufunsho, O.O. et al. 2019. The investigation of the exposure time effects with pressure in the atomic layer deposition process over micro-trench surface.
- Description: Abstract: Tremendous interest has been drawn towards the atomic layer deposition (ALD) as an ultrathin film deposition technique to deposit conformal quality films in the micro-semiconductor industry. However, a further grasp of the ALD process is mandatory to increase the probability of the industry in achieving the necessary improvement which can have a substantial impact on device performance. However, little has been done to investigate the specific effects of the operation pressure on the mechanistic, species transport and reaction rates. Moreover, the effects of these prior properties due to the change of pressure on a complex micro-trench substrate have not been studied yet. Hence, this study focuses on numerically investigating the effect between one and 10 torr operating pressure in the ALD process using the computational fluid dynamic approach. A two-dimensional numerical simulation of the Al2O3 ALD thin film fabrication process over a surface with micro-trenches on a substrate is studied. Trimethyl-Aluminium and Ozone were utilized as the metal and oxidation source reactants. To assist the precursor reaction process a 2.5 second exposure time is added within the ALD sequence. The findings illustrated the fluid flow velocity, mass fraction, and growth of the thin-film process. The evaluations unveil close comparison to literature.
- Full Text:
- Authors: Olufunsho, Oladipo Olotu , Coetzee, Rigardt Alfred Maarten , Jen, Tien-Chien , Olubambi, Peter Apata
- Date: 2019
- Subjects: Atomic layer deposition , Computational fluid dynamic , Exposure time
- Language: English
- Type: Conference proceeding
- Identifier: http://hdl.handle.net/10210/398293 , uj:33149 , Citation: Olufunsho, O.O. et al. 2019. The investigation of the exposure time effects with pressure in the atomic layer deposition process over micro-trench surface.
- Description: Abstract: Tremendous interest has been drawn towards the atomic layer deposition (ALD) as an ultrathin film deposition technique to deposit conformal quality films in the micro-semiconductor industry. However, a further grasp of the ALD process is mandatory to increase the probability of the industry in achieving the necessary improvement which can have a substantial impact on device performance. However, little has been done to investigate the specific effects of the operation pressure on the mechanistic, species transport and reaction rates. Moreover, the effects of these prior properties due to the change of pressure on a complex micro-trench substrate have not been studied yet. Hence, this study focuses on numerically investigating the effect between one and 10 torr operating pressure in the ALD process using the computational fluid dynamic approach. A two-dimensional numerical simulation of the Al2O3 ALD thin film fabrication process over a surface with micro-trenches on a substrate is studied. Trimethyl-Aluminium and Ozone were utilized as the metal and oxidation source reactants. To assist the precursor reaction process a 2.5 second exposure time is added within the ALD sequence. The findings illustrated the fluid flow velocity, mass fraction, and growth of the thin-film process. The evaluations unveil close comparison to literature.
- Full Text:
- «
- ‹
- 1
- ›
- »