- Title
- Thermal and flicker noise improvement in short-channel CMOS detectors
- Creator
- Venter, Johan, Sinha, Saurabh
- Subject
- CMOS sensors, Detector development, Infrared detectors, Integrated circuits, Near infrared, Sensors, Simulations
- Date
- 2014
- Type
- Article
- Identifier
- http://ujcontent.uj.ac.za8080/10210/374668
- Identifier
- uj:4735
- Identifier
- ISSN 0277-786X
- Identifier
- http://hdl.handle.net/10210/11662
- Description
- Integrated circuit (IC) technology has emerged as a suitable platform for infrared (IR) detector development. This technology is however susceptible to on-chip intrinsic noise. By using double-gate MOSFETs for detectors in the near-IR band, noise performance in the readout circuitry is improved, thereby enhancing the overall performance of these detectors. A 1 dB reduction in low-frequency noise is achieved, which is verified through simulations. It is shown that by using short-channel devices that noise improvement is furthermore obtained due to reduction in threshold voltage variation. The double-gate concept is applied in simulation to the three-transistor pixel topology and can also be implemented in other detector topologies such as the four-transistor pixel topology, since readout noise is not limited to specific IR detector topologies. The overall performance of near-IR detectors and the fill factor are significantly improved. © (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
- Publisher
- SPIE
- Rights
- © 2014, SPIE & Authors
- Full Text
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