Abstract
In recent years, industry is ever striving to deposit optimal thin films on Nano devices. This strive led to interest in utilising advance Nano-manufacturing techniques that can fabricate ever-decreasing scale products along with films that provide highly uniform, conformal, and pin-hole free quality thin films. Atomic layer deposition provides a technique that fulfil these requirements. However, the understanding of the deposition process within the fabrication of these thin films are still greatly not well-known. The fluid flow patterns and distributions within the atomic layer deposition reactors are rarely investigated and lacks the fluid flow effect incorporated along with the deposition process near the substrate. Per se, these effects due to the geometrical effect of the inlet injection location from the deposited substrate of a square type Gemstar Reactor is investigated. The findings reveal the inlet flow effect, near substrate flow behaviour, and optimal selection for the deposition of aluminium oxide (Al2O3) thin film. The study simulates the fluid flow properties along with the chemical kinetics by utilizing computational fluid dynamics incorporated within ANSYS Fluent Software. The flow and surface reaction of Trimethylaluminium and Ozone as precursors, along with Argon as the purging substance, are incorporated within the atomic layer deposition sequence. The findings reveal close similarities to that of previous literature.