Abstract
Abstract:
Switched power electronic converters are now able to operate at very high frequencies due
to the development in wide band gap high electron mobility transistors (HEMT) such as GaN and SiC
power semi-conductor technologies. Measuring current at such high switching frequencies with rise
and fall times of a few nanoseconds, requires specialised instruments and a good knowledge of
measurement techniques. Current measurement technologies that are readily available are relatively
expensive and can add unwanted parasitic impedances to the circuit. This paper investigates some
aspects for a few current shunt options that can be integrated into a converter.