Abstract
Fabrication of a well-designed heterostructure is vital for attaining efficient charge-carrier separation. Herein, Nb4N3Tx MXene decorated Bi2WO6/NbSe2 S-scheme heterojunction with enhanced interfacial charge transfer capabilities was designed via hydrothermal and ultrasonication synthetic routes. A well-anchored Nb4N3Tx and Bi2WO6 reticulated nanoflowers onto the surface of NbSe2 nanorod confirmed successful heterojunction fabrication. The optical properties of the hierarchical heterostructure fitted an absorption edge from 430 to 540 nm. Dual transfer channels were realized through a Schottky-junction transfer path at the NbSe2@Nb4N3Tx MXene, while the Bi2WO6/NbSe2 interface depicted an S-scheme transfer mode. Ultimately, Bi2WO6/NbSe2@Nb4N3Tx MXene S-scheme heterojunction achieved high charge-carrier separation and transport efficiency, with a charge-carrier density of 1.54 × 1034 cm−3. Incorporation of density functional theory (DFT) prediction complemented the experimental observation. The density of states (DOS) revealed the electron migration route while the band structures confirmed the band gap energy of the materials.
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