Abstract
Abstract:
Power electronic converters are now able to operate at very high frequencies due to the development in GaN and SiC power semi-conductor technologies. Measuring such high frequencies with rise and fall times of a few nanoseconds requires specialised instruments and a good knowledge of measurement techniques. This paper introduces a current shunt designed to be integrated into these high frequency power electronic converters. The shunt is required to have a high bandwidth in order to reduce the measurement error.