Abstract
The paper presents the effect of conductive or lossy silicon (Si)
substrates on the frequency-dependent distributed series impedance transmission line
(TL) parameters, R(ω) and L(ω). The frequency variations of these parameters of the
microstrip line for four different conductivities of Si substrate are observed and
compared. Keysight Technologies (formerly Agilent’s Electronic Measurement Group)
Advanced Design System is used for the electromagnetic simulations of the microstrip
line structures. Scattering parameters (S-parameters) based equations are used to plot the
variations of series impedance parameters as a function of frequency. Furthermore, this
paper explains a complete method to extract various parameters related to a TL. The
work extracts the parameters of a microstrip TL model provided with the
GlobalFoundries 0.13 μm SiGe BiCMOS8HP process design kit up to 100 GHz.