Abstract
M.Ing. (Electrical & Electronic Engineering)
Measurement techniques and software were developed for the automation
of IV (Current-voltage), CV (Capacitance-voltage), Ct (Capacitance-time),
and QC (Charge-capacitance) measurements of semiconductor devices.
Apparatus used are a computer and programmable peripheral measurement
instruments such as a pico-ammeter, capacitance-voltage meter and
voltmeter.
The theory concerning the device characteristics was adapted for
compatibility with the equipment and the software. Various electrical
parameters of diodes, bipolar and field effect transistors can be obtained
with the IV measurements. Various characteristics of MOS capacitors are
obtained for example to evaluate the oxidation process during semi conductor
production.
A probe station was developed for obtaining device characteristics at
wafer stage.