Pressure induced metal-insulator transition and the absence of magnetism in the narrow band gap semiconductor FeGa₃

Thesis

Open access

Mustafa Abaas Mohamedelkhair Ahmed

Master of Science (MSc), University of Johannesburg

2016

Handle:

https://hdl.handle.net/10210/58646

Abstract

Magnetic materials - Thermal properties

Magnetoresistance

Mössbauer spectroscopy

Mössbauer effect

Please refer to full text to view abstract M.Sc. (Physics)

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Title: Pressure induced metal-insulator transition and the absence of magnetism in the narrow band gap semiconductor FeGa₃
Creators - without role: Mustafa Abaas Mohamedelkhair Ahmed
Contributors - without role: Bryan Doyle
Giovanni Hearne
Emanuela Carleschi
Awarding Institution: University of Johannesburg; Master of Science (MSc)
Theses and Dissertations: Master of Science (MSc), University of Johannesburg
Identifiers: 9911548507691
Copyright: University of Johannesburg
Academic Unit: Department of Physics
Resource Type: Thesis