Abstract
Semiconductors are vital components of the electronic devices that enable innovations in a wide range of fields, including computing, communications, healthcare, military systems, and transportation. Semiconductors are widely used in many devices such as smartphones, robots, radios and etc.
Negative capacitance can amplify the input voltage signal, leading to enhanced voltage gain in electronic circuits. This can be particularly advantageous. Negative capacitance can be thought of as inductance, and it can be caused by change of charge carriers. When a change in charge causes the net voltage across a material to move in the opposite direction, resulting in an increase in charge, negative capacitance is created. Nevertheless, more work is still to be done to analyse negative capacitance behaviour of two and three pin semiconductors.
A detailed component analysis of negative capacitance for the three semiconductor devices a Metal Oxide Silicon Field Effect Transistor (MOSFET) diodes and Bipolar Junction Transistor (BJT) was undertaken. This was accomplished by conducting direct capacitance measurement of the three semiconductor devices at the range of biasing voltage and frequency values.
The technique used is experimental. The three measurement variables were capacitance, biasing voltage, and frequency. The biasing voltage levels were set to range from 0 V to 5 V. Three distinct frequencies were set: 1 kHz, 10 kHz, and 100 kHz. Each semiconductor device was measured in accordance with the arrangement of its multiple configurations. The capacitance-voltage meter was used for measurement when it was arranged in the parallel and series models. The validity of the proposed modelling procedure was verified through measuring more than one semiconductor from the same batch using similar components and tools and in the same environment.
The outcome of this work indicates that negative capacitance values are more frequently detected as the biasing voltage approaches the maximum value, this was observed in all the three selected semiconductor devices. It was observed that the capacitance values tend to be constant with 0 F at lower biasing voltage values. Although the analysis only considers negative capacitance values, some configurations, such as MOSFETs, only produced positive capacitance values. The analysis of negative capacitance behaviour using variables biasing
voltage and frequency is informative and the research offers new perspectives on the subject and provides a novel interpretation of the existing sources on negative capacitance. This study provides relevant information that can be used for future studies.