Abstract
M.Ing. (Electrical & Electronic Engineering)
The gate turn-off thyristor is discussed as a power switch.
A gate-firing circuit for gate turn-off thyristors in the range
10 A - 300 A was developed.
The resonant dc-link as snubber for voltage fed inverters is
discussed. On considering various factors, the gate turn-off
thyristor was chosen as switching component in the inverter.
The problems that deve16ped with the use of gate turn-off thyristors
in resonant dc-link inverters w,re discussed. Which
lead to the development of a storage time compensator for gate
turn-off thyristors.
Attention was given to the various possible control methods for
the resonant dc-link. A study of the possible control strategies
results in the development and manufacturing of both a
single-phase and a three-phase controller.
The operation of the resonant inverter and inverter/load system
were evaluated in terms of wave shapes in the time domain.