Abstract
The millimeter-wave (mmWave) frequency band is rapidly becoming utilized in wireless technologies due to large bandwidth and high data throughput. Wireless technology is increasingly becoming the backbone of the Internet of Things (IoT). This has resulted in increased applications of the radio frequency (RF) spectrum and congestion of the microwave band. This can be solved by utilizing more bandwidth at higher frequency bands.
This work presents the design of a 45nm complementary metal- oxide-semiconductor (CMOS) low noise amplifier (LNA) for a mmWave Ka-band wireless transceiver for radar sensors. The LNA was designed to operate at 0.6V and 700𝜇A for low power consumption. The LNA consists of an inductive degenerated common source (CS) and a common gate (CG) diode-connected load. The LNA achieves a power gain of 31.2 dB and noise figure (NF) of 0.134 dB at 30 GHz consuming 0.42mW of power.