Abstract
Abstract:
Power semi-conductors are able to achieve switching transients within a few nanoseconds and
possibly even faster. These fast switching transients will need to be measured and analyzed
thoroughly. In this paper four different types of shunt constructions and installations are tested on the
same power electronics circuit, giving widely diverse results. Interpreting and analyzing these
measurement results will assist in developing accurate current measurement devices for fast switching
transient power electronic converters of the future.