Abstract
This paper presents a second-order active bandpass
filter (BPF) at millimeter-wave frequency band using 0.13 μm
SiGe BiCMOS technology. A complementary cross-coupled pair
based negative resistance technique is applied to compensate for
the resistive losses of microstrip line resonators. The proposed
active BPF is simulated using the Keysight Technologies
(formerly Agilent’s Electronic Measurement Group) Advanced
Design System 2016.01. The center frequency (fc), 3-dB
bandwidth, and fractional bandwidth of the simulated BPF are
53.85 GHz, 14.18 GHz, and 26.33%, respectively. The BPF shows
an insertion loss (IL) of 0.33 dB and a return loss (RL) of 18.03
dB at fc. The minimum IL of 0.10 dB and best RL of 26.03 dB are
observed in the passband. The noise figure and input 1-dB
compression point (PldB) at fc are 7.93 dB and -3.67 dBm,
respectively. The power dissipation is 2.62 mW at 1.6 V supply
voltage. For the input power level of -10 dBm, the power level of
the second harmonic is -46.02 dBc.